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Si5855CDC
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
600
500
400
300
200
100
0
0
4
8
12
16
20
V KA - Reverse Voltage (V)
Capacitance
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P DM
t 2
0.1
0.05
0.02
Single Pulse
t 1
t 1
1. Duty Cycle, D =
t 2
2. Per Unit Base = R thJA = 95 °C/W
3. T JM - T A = P DM Z thJA(t)
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68910 .
www.vishay.com
8
Document Number: 68910
S10-0548-Rev. B, 08-Mar-10
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